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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current8 A
On-resistance22 mΩMax · 4A
Gate threshold voltage1 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Power Dissipation (Max)1.5W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88FL/MCPH6
Other
Base Product NumberMCH64
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds705 pF @ 10 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs22mOhm @ 4A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±9V
Vgs(th) (Max) @ Id1V @ 1mA

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