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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current12 A
On-resistance11 mΩMax · 9.7A
Gate threshold voltage1 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Power Dissipation (Max)-
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageCut Tape (CT) Digi-Reel®
Package / Case6-WDFN Exposed Pad
Supplier Device PackageDFN2020-6J
Other
Base Product NumberMCMN2012
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 4 V
MfrMicro Commercial Co
Product StatusObsolete
Rds On (Max) @ Id, Vgs11mOhm @ 9.7A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1V @ 250µA

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