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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage100 V
Continuous drain current6 A
On-resistance205 mΩMax · 6A
Gate threshold voltage2.8 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C6A (Tj)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1.25W
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223
Other
Base Product NumberMCT06
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 25 V
MfrMicro Commercial Co
Product StatusActive
Rds On (Max) @ Id, Vgs205mOhm @ 6A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.8V @ 250µA

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