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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage20 V
Continuous drain current15 A
On-resistance25 mΩMax · 5.4A
Gate threshold voltage900 mVMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C15A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)1.25W
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C
PackageBulk
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223
Other
Base Product NumberMCT15
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs18.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 10 V
MfrMicro Commercial Co
Product StatusActive
Rds On (Max) @ Id, Vgs25mOhm @ 5.4A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id900mV @ 250µA

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