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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage700 V
Collector current10 AMax
DC current gain55.5A
Power58 WMax
Power
Current - Collector Cutoff (Max)200µA
Current - Collector (Ic) (Max)10 A
Power - Max58 W
Voltage - Collector Emitter Breakdown (Max)700 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 5.5A, 5V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-3P-3 Full Pack
Supplier Device PackageTO-3PF
Other
Base Product NumberMD2009
MfrSTMicroelectronics
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic2.8V @ 1.4A, 5.5A

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