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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
Collector current4 AMax
DC current gain40200mA
Power1.4 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)4 A
Power - Max1.4 W
Voltage - Collector Emitter Breakdown (Max)100 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Frequency - Transition40MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
Other
Base Product NumberMJD24
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A

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