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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
Collector current3 AMax
DC current gain103A
Power1.56 WMax
Power
Current - Collector Cutoff (Max)50µA
Current - Collector (Ic) (Max)3 A
Power - Max1.56 W
Voltage - Collector Emitter Breakdown (Max)100 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A, 4V
Frequency - Transition3MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK
Other
Base Product NumberMJD31
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A

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