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Technical parameters

Key specs

TypePNP
Collector-emitter voltage80 V
Collector current3 AMax
DC current gain50100mA
Power1.5 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)3 A
Power - Max1.5 W
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Frequency - Transition50MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Other
Base Product NumberMJE172
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A

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