MOSFET 60V/85A/0.004
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current85 A
On-resistance157 mΩMax · 10A
Gate threshold voltage3 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 85A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C |
| Package | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P |
| Other | |
| Base Product Number | MLD685 |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 11500 pF @ 10 V |
| Mfr | Sanken Electric USA Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 157mOhm @ 10A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |