MMBT4401T-7
Diodes IncorporatedUnited States

MMBT4401T-7

Single Bipolar TransistorsSOT-23

TRANS NPN 40V 0.6A SOT523

MMBT4401T-7 is a PNP bipolar transistor in SOT-23 package with 40V VCEO and 500mA IC, qualified to AEC-Q101, suitable for medium power amplification and switching.Checked against the datasheet

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Technical parameters

Key specs

TypePNP
Collector-emitter voltage40 VMin 40 V (IC=1.0mA，IB=0)
Collector current500 mAMax
DC current gain20 ~ 100Min 20 (IC=100μA，VCE=1.0V)，Min 40 (IC=1.0mA，VCE=1.0V)，Min 80 (IC=10mA，VCE=1.0V)，Min 100 Max 300 (IC=150mA，VCE=1.0V)，Min 40 (IC=500mA，VCE=2.0V)
Power150 mWMax

Datasheet-verified parameters

22 items
ParameterValue and test conditionsSource
TypePNP
Collector-Emitter Breakdown VoltageMin 40 V (IC=1.0mA, IB=0)
Collector Current500 mA (Test Condition for hFE and VCE(SAT))
DC Current GainMin 20 (IC=100μA, VCE=1.0V); Min 40 (IC=1.0mA, VCE=1.0V); Min 80 (IC=10mA, VCE=1.0V); Min 100 Max 300 (IC=150mA, VCE=1.0V); Min 40 (IC=500mA, VCE=2.0V)
PackageSOT-23
Operating TemperatureTA = 25°C (Electrical Characteristics specified)
GradeAEC-Q101
RoHSCompliant
Collector-Base Breakdown VoltageMin 60 V (IC=100μA, IE=0)
Emitter-Base Breakdown VoltageMin 6.0 V (IE=100μA, IC=0)
Collector Cutoff CurrentMax 100 nA (VCE=35V, VEB(OFF)=0.4V)
Collector-Emitter Saturation VoltageMax 0.40 V (IC=150mA, IB=15mA); Max 0.75 V (IC=500mA, IB=50mA)
Base-Emitter Saturation VoltageMin 0.75 V Max 0.95 V (IC=150mA, IB=15mA); Min 0.95 V Max 1.2 V (IC=500mA, IB=50mA)
Output CapacitanceMax 6.5 pF (VCB=5.0V, f=1.0MHz, IE=0)
Input CapacitanceMax 30 pF (VEB=0.5V, f=1.0MHz, IC=0)
Current Gain-Bandwidth ProductMin 250 MHz (VCE=10V, IC=20mA, f=100MHz)
Delay TimeMax 15 ns (VCC=30V, IC=150mA, VBE(off)=2.0V, IB1=15mA)
Rise TimeMax 20 ns (VCC=30V, IC=150mA, VBE(off)=2.0V, IB1=15mA)
Storage TimeMax 225 ns (VCC=30V, IC=150mA, IB1=IB2=15mA)
Fall TimeMax 30 ns (VCC=30V, IC=150mA, IB1=IB2=15mA)
Case MaterialMolded Plastic, UL Flammability Classification Rating 94V-0
Moisture SensitivityLevel 1 per J-STD-020C
All parameters (19)ExpandCollapse
Power
Current - Collector Cutoff (Max)100nA
Current - Collector (Ic) (Max)600 mA
Power - Max150 mW
Voltage - Collector Emitter Breakdown (Max)40 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 1V
Frequency - Transition250MHz
Environment and package
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-523
QualificationAEC-Q101
Supplier Device PackageSOT-523
Other
Base Product NumberMMBT4401
MfrDiodes Incorporated
Product StatusDiscontinued at Digi-Key
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA

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