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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage350 V
Collector current100 mAMax
DC current gain2050mA
Power225 mWMax
Power
Current - Collector Cutoff (Max)50nA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max225 mW
Voltage - Collector Emitter Breakdown (Max)350 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V
Frequency - Transition200MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Other
Base Product NumberMMBT6517
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA

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