All alternatives

View full report

Technical parameters

Key specs

ChannelP-channel
Drain-source voltage60 V
Continuous drain current1.25 A
On-resistance170 mΩMax · 1.25A
Gate threshold voltage3 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C1.25A (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)500mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Other
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds361 pF @ 30 V
MfrDiotec Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs170mOhm @ 1.25A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

Documents