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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 V
Collector current300 mAMax
DC current gain10000100mA
Power200 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)300 mA
Power - Max200 mW
Voltage - Collector Emitter Breakdown (Max)30 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition125MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSMT3
Other
Base Product NumberMMSTA13
MfrRohm Semiconductor
Product StatusActive
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA

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