onsemiUnited States

MPF960

MOSFET N-CH 60V 2A TO92-3

All alternatives

ChannelN-channel

Drain-source voltage60 V

Continuous drain current2 A

On-resistance1.7 ΩMax · 1A

Gate threshold voltage3.5 VMax · 1mA

Power
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	1W (Ta)
Environment and package
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92 (TO-226)
Other
Base Product Number	MPF960
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	70 pF @ 25 V
Mfr	onsemi
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	1.7Ohm @ 1A, 10V
Series	-
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 1mA

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