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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage90 V
Continuous drain current2 A
On-resistance2 ΩMax · 1A
Gate threshold voltage3.5 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drain to Source Voltage (Vdss)90 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)1W (Ta)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92 (TO-226)
Other
Base Product NumberMPF990
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds70 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs2Ohm @ 1A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 1mA

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