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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage12 V
Collector current50 mAMax
DC current gain208mA
Power350 mWMax
Power
Current - Collector Cutoff (Max)10nA (ICBO)
Current - Collector (Ic) (Max)50 mA
Power - Max350 mW
Voltage - Collector Emitter Breakdown (Max)12 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8mA, 10V
Frequency - Transition600MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92 (TO-226)
Other
Base Product NumberMPS356
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN

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