All alternatives

View full report

Technical parameters

Key specs

TypeNPN
Collector-emitter voltage40 V
Collector current1 AMax
DC current gain90100mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)50nA (ICBO)
Current - Collector (Ic) (Max)1 A
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)40 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 100mA, 1V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
Base Product NumberMPS653
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA

Documents