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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage40 V
Collector current1 AMax
DC current gain50500mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)100nA
Current - Collector (Ic) (Max)1 A
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)40 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 1V
Frequency - Transition100MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92 (TO-226)
Other
Base Product NumberMPS660
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A

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