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Technical parameters

Key specs

TypePNP
Collector-emitter voltage60 V
Collector current2 AMax
DC current gain751A
Power625 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)2 A
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)60 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 1A, 2V
Frequency - Transition75MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device PackageTO-92 (TO-226)
Other
Base Product NumberMPS751
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A

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