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类型PNP
集射极耐压60 V
集电极电流100 mA最大
放大倍数 hFE1001mA
功率625 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA |
| Current - Collector (Ic) (Max) | 100 mA |
| Power - Max | 625 mW |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 150MHz |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| 其他 | |
| Base Product Number | MPS859 |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |