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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage20 V
DC current gain2000010mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)20 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 10mA, 5V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92 (TO-226)
Other
Base Product NumberMPSA12
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1V @ 10µA, 10mA

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