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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
Collector current500 mAMax
DC current gain10000100mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)500nA
Current - Collector (Ic) (Max)500 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)100 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition200MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageCut Tape (CT) Tape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device PackageTO-92 (TO-226)
Other
Base Product NumberMPSA29
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA

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