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Technical parameters

Power
Current - Drain (Idss) @ Vds (Vgs=0)15 mA @ 20 V
Drain to Source Voltage (Vdss)40 V
Power - Max360 mW
Voltage - Breakdown (V(BR)GSS)40 V
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 175°C (TJ)
PackageBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Supplier Device PackageTO-18 (TO-206AA)
Other
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds16pF @ 20V
MfrMicrochip Technology
Product StatusActive
Resistance - RDS(On)50 Ohms
Series-

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