Microchip TechnologyUnited States
MOSFET SIC 1700V 35 MOHM TO-268
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1.7 kV
Continuous drain current59 A
On-resistance45 mΩMax · 30A
Gate threshold voltage3.25 VMax · 2.5mA (Typ)
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Power Dissipation (Max) | 278W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package | D3PAK |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 1000 V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 30A, 20V |
| Series | - |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -10V |
| Vgs(th) (Max) @ Id | 3.25V @ 2.5mA (Typ) |