Microchip TechnologyUnited States
MOSFET SIC 1200 V 80 MOHM TO-263
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1.2 kV
Continuous drain current35 A
On-resistance100 mΩMax · 15A
Gate threshold voltage2.8 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Power Dissipation (Max) | 182W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | - |
| Supplier Device Package | TO-263-7 |
| Other | |
| Base Product Number | MSC080 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 838 pF @ 1000 V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 15A, 20V |
| Series | - |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
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