Microchip TechnologyUnited States
MOSFET SIC 3300 V 80 MOHM TO-247
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage3.3 kV
Continuous drain current41 A
On-resistance105 mΩMax · 30A
Gate threshold voltage2.97 VMax · 3mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Drain to Source Voltage (Vdss) | 3300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Power Dissipation (Max) | 381W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-247-4 |
| Supplier Device Package | TO-247-4 |
| Other | |
| Base Product Number | MSC080 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3462 pF @ 2400 V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 30A, 20V |
| Series | - |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -10V |
| Vgs(th) (Max) @ Id | 2.97V @ 3mA |