Microchip TechnologyUnited States
SIC SBD 3300 V 90 A TO-247 MAX
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View full reportTechnical parameters
Key specs
Reverse voltage3.3 kV
Average rectified current184 A
Forward voltage2.4 VMax · 90 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 184A |
| Current - Reverse Leakage @ Vr | 200 µA @ 3300 V |
| Voltage - DC Reverse (Vr) (Max) | 3300 V |
| Voltage - Forward (Vf) (Max) @ If | 2.4 V @ 90 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Bulk |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247 |
| Other | |
| Base Product Number | MSC090 |
| Capacitance @ Vr, F | 6326pF @ 1V, 1MHz |
| Mfr | Microchip Technology |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
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