MOSFET SIC 3300 V 400 MOHM TO-24
沟道N 沟道
耐压3.3 kV
连续漏极电流11 A
导通电阻520 mΩ
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沟道N 沟道
耐压3.3 kV
连续漏极电流11 A
导通电阻520 mΩ最大 · 5A
阈值电压2.97 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drain to Source Voltage (Vdss) | 3300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Power Dissipation (Max) | 131W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-247-4 |
| Supplier Device Package | TO-247-4 |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 579 pF @ 2400 V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 5A, 20V |
| Series | - |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -10V |
| Vgs(th) (Max) @ Id | 2.97V @ 1mA |
技术资料
该型号暂未收录资料。