Microchip TechnologyUnited States
PM-DIODE-SIC-SBD-SP6C
All alternatives
View full reportTechnical parameters
Key specs
Reverse voltage1.7 kV
Average rectified current200 A
Forward voltage1.8 VMax · 200 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 200 A |
| Current - Reverse Leakage @ Vr | 800 µA @ 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 200 A |
| Voltage - Peak Reverse (Max) | 1.7 kV |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | Module |
| Supplier Device Package | SP6 |
| Other | |
| Base Product Number | MSCDC200 |
| Diode Type | Single Phase |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Technology | Silicon Carbide Schottky |
Documents
No documents are linked to this part yet.