MSCSM120VR1M31C1AG

在产FET,MOSFET 阵列

SIC 2N-CH 1200V 89A

全部替代型号

查看完整报告

技术参数

电源
Current - Continuous Drain (Id) @ 25°C89A (Tc)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Power - Max395W (Tc)
环境与封装
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 175°C (TJ)
PackageBulk
Package / CaseModule
Supplier Device Package-
其他
Base Product NumberMSCSM120
Configuration2 N Channel (Phase Leg)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds3020pF @ 1000V
MfrMicrochip Technology
Product StatusActive
Rds On (Max) @ Id, Vgs31mOhm @ 40A, 20V
Series-
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id2.8V @ 3mA

技术资料