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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Drain to Source Voltage (Vdss)1700V (1.7kV)
Power - Max319W (Tc)
Environment and package
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 175°C (TJ)
PackageBulk
Package / CaseModule
Supplier Device Package-
Other
Base Product NumberMSCSM170
Configuration6 N-Channel (3-Phase Bridge)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs178nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 1000V
MfrMicrochip Technology
Product StatusActive
Rds On (Max) @ Id, Vgs45mOhm @ 30A, 20V
Series-
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id3.2V @ 2.5mA

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