Microchip TechnologyUnited States
SIC 6N-CH 700V 238A SP6-P
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 238A (Tc) |
| Drain to Source Voltage (Vdss) | 700V |
| Power - Max | 674W (Tc) |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | Module |
| Supplier Device Package | SP6-P |
| Other | |
| Base Product Number | MSCSM70 |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 430nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000pF @ 700V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 80A, 20V |
| Series | - |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 2.4V @ 8mA |