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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drain to Source Voltage (Vdss)700V
Power - Max176W (Tc)
Environment and package
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 175°C (TJ)
PackageBulk
Package / CaseModule
Supplier Device PackageSP3F
Other
Base Product NumberMSCSM70
Configuration4 N-Channel (Three Level Inverter)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs99nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds2010pF @ 700V
MfrMicrochip Technology
Product StatusActive
Rds On (Max) @ Id, Vgs44mOhm @ 30A, 20V
Series-
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id2.7V @ 2mA

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