DIODE MODULE GP 1.2KV 3TOWER
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 100A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 100 A |
| Условия эксплуатации и корпус | |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package | Bulk |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
| Другое | |
| Base Product Number | MSRT100 |
| Diode Configuration | 1 Pair Series Connection |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |