GeneSiC SemiconductorUnited States
DIODE MODULE 1600V 600A 3TOWER
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 600A (DC) |
| Voltage - DC Reverse (Vr) (Max) | 1600 V |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package | Bulk |
| Package / Case | 3-SMD Module |
| Supplier Device Package | Three Tower |
| Other | |
| Diode Configuration | - |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | - |
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