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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage500 V
Continuous drain current2 A
On-resistance6 ΩMax · 1A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drain to Source Voltage (Vdss)500 V
Environment and package
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK
Other
Base Product NumberMTB2P
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1183 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs6Ohm @ 1A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

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