All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current1.5 A
On-resistance220 mΩMax · 1.5A
Gate threshold voltage3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Drain to Source Voltage (Vdss)60 V
Power Dissipation (Max)1.25W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device PackageMicro8™
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V
MfrMotorola
Product StatusActive
Rds On (Max) @ Id, Vgs220mOhm @ 1.5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Documents

No documents are linked to this part yet.