MTP23P06VG
onsemi美国

MTP23P06VG

停产单 FET,MOSFETTO-220

MOSFET P-CH 60V 23A TO220AB

沟道P 沟道
耐压60 V
连续漏极电流23 A
导通电阻120 mΩ

全部替代型号

查看完整报告

技术参数

沟道P 沟道
耐压60 V
连续漏极电流23 A
导通电阻120 mΩ最大 · 11.5A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)90W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
其他
Base Product NumberMTP23
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1620 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs120mOhm @ 11.5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料