MTP3055VL
onsemi美国

MTP3055VL

在产单 FET,MOSFETTO-220-3

MOSFET N-CH 60V 12A TO220-3

沟道N 沟道
耐压60 V
连续漏极电流12 A
导通电阻180 mΩ

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技术参数

沟道N 沟道
耐压60 V
连续漏极电流12 A
导通电阻180 mΩ最大 · 6A
阈值电压2 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)5V
Power Dissipation (Max)48W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
Base Product NumberMTP3055
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 25 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs180mOhm @ 6A, 5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id2V @ 250µA

器件图片

技术资料