MTY100N10E
onsemi美国

MTY100N10E

停产单 FET,MOSFETTO-264

MOSFET N-CH 100V 100A TO264

沟道N 沟道
耐压100 V
连续漏极电流100 A
导通电阻11 mΩ

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流100 A
导通电阻11 mΩ最大 · 50A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264
其他
Base Product NumberMTY10
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10640 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs11mOhm @ 50A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料