onsemi美国

NDC652P

停产单 FET,MOSFETSOT-23-6 Thin

MOSFET P-CH 30V 2.4A SUPERSOT6

沟道P 沟道
耐压30 V
连续漏极电流2.4 A
导通电阻110 mΩ

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技术参数

沟道P 沟道
耐压30 V
连续漏极电流2.4 A
导通电阻110 mΩ最大 · 3.1A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1.6W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6
其他
Base Product NumberNDC652
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 15 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs110mOhm @ 3.1A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-20V
Vgs(th) (Max) @ Id3V @ 250µA

技术资料