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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage50 V
Continuous drain current15 A
On-resistance100 mΩMax · 7.5A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drain to Source Voltage (Vdss)50 V
Environment and package
Mounting TypeThrough Hole
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
Base Product NumberNDP405
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs100mOhm @ 7.5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

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