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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C3.8A
Drain to Source Voltage (Vdss)20V
Power - Max900mW
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberNDS893
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1120pF @ 10V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs70mOhm @ 3.8A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

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