onsemiUnited States
DIODE GEN PURP 650V DIE
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View full reportTechnical parameters
Key specs
Reverse voltage650 V
Forward voltage2.8 VMax · 30 A
TypeStandard
| Power | |
|---|---|
| Current - Average Rectified (Io) | - |
| Current - Reverse Leakage @ Vr | 1 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 2.8 V @ 30 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175°C (Max) |
| Package | Tape & Reel (TR) |
| Package / Case | Die |
| Supplier Device Package | Die |
| Other | |
| Base Product Number | NGTD8 |
| Capacitance @ Vr, F | - |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Speed | - |
| Technology | Standard |