onsemiUnited States
MOSFET N-CH 52V 2.6A SOT223
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage52 V
Continuous drain current2.6 A
On-resistance125 mΩMax · 2.6A
Gate threshold voltage2.5 VMax · 100μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Drain to Source Voltage (Vdss) | 52 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 10V |
| Power Dissipation (Max) | 1.69W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 (TO-261) |
| Other | |
| Base Product Number | NIF9N05 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 35 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.6A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±15V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |