onsemiUnited States
MOSFET N-CH 24V 9.5A 4PLLP
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage24 V
Continuous drain current9.5 A
On-resistance13 mΩMax · 6A
Gate threshold voltage2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Drain to Source Voltage (Vdss) | 24 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 1.4W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 4-DFN |
| Supplier Device Package | 4-PLLP (6.2x5.2) |
| Other | |
| Base Product Number | NILMS45 |
| FET Feature | Current Sensing |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 6 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 6A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
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