onsemiUnited States
SIC MOS WAFER SALES 80MOHM 1200V
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1.2 kV
Continuous drain current31 A
On-resistance110 mΩMax · 20A
Gate threshold voltage4.3 VMax · 5mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Power Dissipation (Max) | 178W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tray |
| Package / Case | Die |
| Supplier Device Package | Die |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1112 pF @ 800 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V |
| Series | - |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -15V |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |