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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage50 V
Collector current1 AMax
DC current gain120500mA
Power1 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)1 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 10V
Frequency - Transition200MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBag
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92L
Other
MfrNTE Electronics, Inc
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA

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