MOSFET-N-CHAN ENHANCEMENT TO-3P
沟道N 沟道
耐压900 V
连续漏极电流14 A
导通电阻850 mΩ
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沟道N 沟道
耐压900 V
连续漏极电流14 A
导通电阻850 mΩ最大 · 7A
阈值电压4 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 275W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C |
| Package | Bag |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
| Mfr | NTE Electronics, Inc |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 7A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |