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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C1.5A
Drain to Source Voltage (Vdss)30V
Power - Max600mW
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
Other
Base Product NumberNTGD41
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs7.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds281pF @ 15V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs160mOhm @ 2.1A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

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